- RS 库存编号 760-9982
- 制造商零件编号 STP11NM60ND
| STMicroelectronics | - | - | N | 10 A | - | 600 V | - | - | - | 450 mΩ | FDmesh | 通孔 | 5V | 3 | 3V | -25 V、+25 V | - | 增强 | 单 | - | - | 90 W | - | - | - | +150 °C | 功率 MOSFET | 4.6mm | - | 10.4mm | 15.75mm | 30 nC @ 10 V | Si | 1 |
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- RS 库存编号 759-9119
- 制造商零件编号 FDD8647L
| Fairchild Semiconductor | - | - | N | 52 A | - | 40 V | - | - | - | 13.6 mΩ | PowerTrench | 表面贴装 | - | 3 | 1V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 43 W | - | - | - | +150 °C | 功率 MOSFET | 6.22mm | - | 6.73mm | 2.39mm | 20 nC @ 10 V | Si | 1 |
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- RS 库存编号 688-9130
- 制造商零件编号 NTF2955T1G
| onsemi | MOSFET | P | - | - | 2.6 | - | 60 | SOT-223 | SOT-223 | - | NTF | 表面安装 | - | 4 | - | - | - | 增强 | - | 14.3 | -55 | - | 2.3 | 20 | - | 175 | - | 3.5 | No | 6.5 | 1.57 | - | - | - |
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- RS 库存编号 827-6135P
- 制造商零件编号 TK16A60W,S4VX(M
| Toshiba | - | - | N | 15.8 A | - | 600 V | - | - | - | 190 mΩ | TK | 通孔 | 3.7V | 3 | - | -30 V、+30 V | - | 增强 | 单 | - | - | 40 W | - | - | - | +150 °C | 功率 MOSFET | 4.5mm | - | 10mm | 15mm | 38 nC @ 10 V | Si | 1 |
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- RS 库存编号 864-8063P
- 制造商零件编号 FDD2572_F085
| Fairchild Semiconductor | - | - | N | 29 A | - | 150 V | - | - | - | 146 mΩ | PowerTrench | 表面贴装 | - | 3 | 2V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 135 W | - | - | - | +175 °C | 功率 MOSFET | 6.22mm | - | 6.73mm | 2.39mm | 26 nC @ 10 V | Si | 1 |
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- RS 库存编号 864-8720P
- 制造商零件编号 FDS9958_F085
| Fairchild Semiconductor | - | - | P | 2.9 A | - | 60 V | - | - | - | 190 mΩ | PowerTrench | 表面贴装 | - | 8 | 1V | -20 V、+20 V | - | 增强 | 隔离式 | - | -55 °C | 2 W | - | - | - | +150 °C | 功率 MOSFET | 3.9mm | - | 4.9mm | 1.575mm | 16 nC @ 10 V | Si | 2 |
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- RS 库存编号 739-6125P
- 制造商零件编号 FCH47N60_F133
小计 1 件 (按管提供) RMB115.50(不含税)RMB115.50/件 | Fairchild Semiconductor | - | - | N | 47 A | - | 600 V | - | - | - | 70 mΩ | - | 通孔 | - | 3 | - | -30 V、+30 V | - | 增强 | - | - | -55 °C | 417 W | - | - | - | +150 °C | 功率 MOSFET | 4.7mm | - | 15.6mm | 20.6mm | 210 nC @ 10 V | - | 1 |
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- RS 库存编号 759-9594
- 制造商零件编号 FDMS2672
| onsemi | MOSFET | N | - | - | 20 | - | 200 | WDFN | WDFN | - | UltraFET | 表面安装 | - | 8 | - | - | - | 增强 | - | 30 | -55 | - | 78 | 20 | 1.2 | 150 | - | 6 | No | 5 | 0.75 | - | - | - |
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- RS 库存编号 822-2510P
- 制造商零件编号 DMG1024UV-7
| DiodesZetex | - | - | N | 1.38 A | - | 20 V | - | - | - | 10 Ω | - | 贴片 | 1V | 6 | - | -6 V、+6 V | - | 增强 | 隔离式 | - | -55 °C | 530 mW | - | - | - | +150 °C | - | 1.25mm | - | 1.7mm | 0.6mm | 0.737 nC @ 4.5 V | Si | 2 |
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- RS 库存编号 827-6090P
- 制造商零件编号 TK100A08N1,S4X(S
| Toshiba | - | - | N | 100 A | - | 80 V | - | - | - | 3.2 mΩ | TK | 通孔 | 4V | 3 | - | -20 V、+20 V | - | 增强 | 单 | - | - | 45 W | - | - | - | +150 °C | 功率 MOSFET | 4.5mm | - | 10mm | 15mm | 130 nC @ 10 V | Si | 1 |
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- RS 库存编号 822-2532
- 制造商零件编号 DMG6602SVT-7
| DiodesZetex | - | - | N,P | 2.1 A,3.4 A | - | 30 V | - | - | - | 100 mΩ、140 mΩ | - | 表面贴装 | 3V | 6 | - | -20 V、+20 V | - | 增强 | 隔离式 | - | -55 °C | 1.27 W | - | - | - | +150 °C | 功率 MOSFET | 1.6mm | - | 2.9mm | 0.9mm | 7 nC @ 10 V,9 nC @ 10 V | Si | 2 |
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- RS 库存编号 864-4954
- 制造商零件编号 FDMC8651
小计(1 卷,共 3000 件) RMB12,156.00(不含税)RMB4.052/件 | Fairchild Semiconductor | - | - | N | 64 A | - | 30 V | - | - | - | 9 mΩ | PowerTrench | 表面贴装 | - | 8 | 0.8V | -12 V、+12 V | - | 增强 | 单 | - | -55 °C | 41 W | - | - | - | +150 °C | 功率 MOSFET | 3.3mm | - | 3.3mm | 1.05mm | 19.4 nC @ 4.5 V | Si | 1 |
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- RS 库存编号 830-3363P
- 制造商零件编号 IRLR3103TRPBF
| International Rectifier | - | - | N | 55 A | - | 30 V | - | - | - | 24 mΩ | HEXFET | 表面贴装 | 1V | 3 | 1V | -16 V、+16 V | - | 增强 | 单 | - | -55 °C | 107 W | - | - | - | +175 °C | 功率 MOSFET | 6.22mm | - | 6.73mm | 2.39mm | 50 nC @ 4.5 V | Si | 1 |
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- RS 库存编号 752-8211P
- 制造商零件编号 BSP300
| Infineon | - | - | N | 190 mA | - | 800 V | - | - | - | 20 Ω | SIPMOS | 表面贴装 | 4V | 3+Tab | 2V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 1.8 W | - | - | - | +150 °C | 小信号 | 3.5mm | - | 6.5mm | 1.6mm | - | Si | 1 |
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- RS 库存编号 826-8942P
- 制造商零件编号 BSO220N03MDG
| Infineon | - | - | N | 7.7 A | - | 30 V | - | - | - | 27 mΩ | OptiMOS 3 | 表面贴装 | 2.1V | 8 | 1V | -20 V、+20 V | - | 增强 | 隔离式 | - | -55 °C | 2 W | - | - | - | +150 °C | 功率 MOSFET | 4mm | - | 5mm | 1.65mm | 3.8 nC @ 4.5 V | Si | 2 |
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- RS 库存编号 827-0519P
- 制造商零件编号 DMC1229UFDB-7
| DiodesZetex | - | - | N,P | 3 A,7.2 A | - | 12 V | - | - | - | 65 mΩ、170 mΩ | - | 表面贴装 | 1V | 6 | - | -8 V、+8 V | - | 增强 | 隔离式 | - | -55 °C | 2.2 W | - | - | - | +150 °C | 功率 MOSFET | 2.075mm | - | 2.08mm | 0.555mm | 17.9 nC @ 8 V,19.6 nC @ 8 V | Si | 2 |
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- RS 库存编号 830-3408P
- 制造商零件编号 IRLSL4030PBF
| International Rectifier | - | - | N | 180 A | - | 100 V | - | - | - | 4.5 mΩ | HEXFET | 通孔 | 2.5V | 3 | 1V | -16 V、+16 V | - | 增强 | 单 | - | -55 °C | 370 W | - | - | - | +175 °C | 功率 MOSFET | 4.83mm | - | 10.67mm | 11.3mm | 87 nC @ 4.5 V | Si | 1 |
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- RS 库存编号 739-0151P
- 制造商零件编号 FDD8880
| Fairchild Semiconductor | MOSFET | N | - | - | 58 | - | 30 | DPAK | DPAK | - | PowerTrench | 表面安装 | - | 3 | - | - | - | 增强 | - | 23 | -55 | - | 55 | 20 | - | 175 | - | 6.22 | No | 6.73 | 2.39 | - | - | - |
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- RS 库存编号 865-5756P
- 制造商零件编号 IRF3805PBF
小计 5 件 (按管提供) RMB115.39(不含税)RMB23.078/件 | International Rectifier | - | - | N | 210 A | - | 55 V | - | - | - | 3.3 mΩ | HEXFET | 通孔 | 4V | 3 | 2V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 300 W | - | - | - | +175 °C | 功率 MOSFET | 4.83mm | - | 10.67mm | 16.51mm | 190 nC @ 10 V | Si | 1 |
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- RS 库存编号 827-6117P
- 制造商零件编号 TK12J60W,S1VQ(O
| Toshiba | - | - | N | 11.5 A | - | 600 V | - | - | - | 300 mΩ | TK | 通孔 | 3.7V | 3 | - | -30 V、+30 V | - | 增强 | 单 | - | - | 110 W | - | - | - | +150 °C | 功率 MOSFET | 4.5mm | - | 15.5mm | 20mm | 25 nC @ 10 V | Si | 1 |