- RS 库存编号 540-9856P
- 制造商零件编号 IRF7406PBF
| International Rectifier | - | - | P | 5.8 A | - | 30 V | - | - | - | 45 mΩ | HEXFET | 表面贴装 | 1V | 8 | 1V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 2.5 W | - | - | - | +150 °C | 功率 MOSFET | 4mm | - | 5mm | 1.5mm | 59 nC @ 10 V | Si | 1 |
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- RS 库存编号 872-4149P
- 制造商零件编号 AUIRFN8403TR
| International Rectifier | - | - | N | 123 A | - | 40 V | - | - | - | 3.3 mΩ | HEXFET | 表面贴装 | 3.9V | 8 | 2.6V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 94 W | - | - | - | +175 °C | 功率 MOSFET | 5mm | - | 5.85mm | 1.17mm | 64 nC @ 10 V | Si | 1 |
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- RS 库存编号 872-3290
- 制造商零件编号 SI7465DP-T1-E3
小计(1 包,共 3000 件) RMB10,632.00(不含税)RMB3.544/件 | Vishay | - | - | P | 3.2 A | - | 60 V | - | - | - | 80 mΩ | TrenchFET | 表面贴装 | - | 8 | 1V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 1.5 W | - | - | - | +150 °C | 功率 MOSFET | 5mm | - | 5.99mm | 1.12mm | 26 nC @ 10 V | Si | 1 |
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- RS 库存编号 719-2822
- 制造商零件编号 NDF08N60ZG
| ON Semiconductor | - | - | N | 7.5 A | - | 600 V | - | - | - | 950 mΩ | - | 通孔 | 4.5V | 3 | - | +30 V | - | 增强 | 单 | - | -55 °C | 139 W | - | - | - | +150 °C | 功率 MOSFET | 4.9mm | - | 10.63mm | 16.12mm | 10 V 时,39 常闭 | Si | 1 |
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- RS 库存编号 876-5654P
- 制造商零件编号 STF33N65M2
| STMicroelectronics | - | - | N | 24 A | - | 650 V | - | - | - | 140 mΩ | MDmesh M2 | 通孔 | 4V | 3 | 2V | -25 V、+25 V | - | 增强 | 单 | - | - | 34 W | - | - | - | +150 °C | 功率 MOSFET | 4.6mm | - | 10.4mm | 16.4mm | 41.5 nC @ 10 V | Si | 1 |
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- RS 库存编号 864-8537P
- 制造商零件编号 FDP039N08B_F102
| Fairchild Semiconductor | - | - | N | 171 A | - | 80 V | - | - | - | 3.9 mΩ | - | 通孔 | - | 3 | 2.5V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 214 W | - | - | - | +175 °C | 功率 MOSFET | 4.672mm | - | 10.36mm | 15.215mm | 102 nC @ 10 V | - | 1 |
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- RS 库存编号 725-8332
- 制造商零件编号 PMV56XN,215
| NXP | - | - | N | 3.7 A | - | 20 V | - | - | - | 85 mΩ | - | 表面贴装 | - | 3 | 0.65V | -8 V、+8 V | - | 增强 | 单 | - | -65 °C | 1.92 W | - | - | - | +150 °C | 功率 MOSFET | 1.4mm | - | 3mm | 1mm | 5.4 nC @ 4.5 V | Si | 1 |
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- RS 库存编号 871-5019
- 制造商零件编号 MDU1514URH
| MagnaChip | - | - | N | 66 A | - | 30 V | - | - | - | 9 mΩ | - | 表面贴装 | 2.7V | 8 | - | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 46.2 W | - | - | - | +150 °C | - | 5.1mm | - | 6.1mm | 1.1mm | 19 nC @ 10 V | Si | 1 |
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- RS 库存编号 875-2504
- 制造商零件编号 MMIX1F132N50P3
小计(1 件) RMB223.21(不含税)RMB223.21/件 | IXYS | - | - | N | 63 A | - | 500 V | - | - | - | 43 mΩ | HiperFET, Polar3 | 贴片 | 5V | 24 | - | -40 V、+40 V | - | 增强 | 单 | - | -55 °C | 520 W | - | - | - | +150 °C | - | 23.25mm | - | 25.25mm | 5.7mm | 267 nC @ 10 V | Si | 1 |
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- RS 库存编号 725-9322
- 制造商零件编号 IRLB8721PBF
| Infineon | MOSFET | N | - | - | 62 | - | 30 | TO-220 | TO-220 | - | HEXFET | 通孔 | - | 3 | - | - | - | 增强 | - | 7.6 | -55 | - | 65 | 20 | 1 | 175 | - | 4.83 | No | 10.67 | 9.02 | - | - | - |
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- RS 库存编号 719-2783P
- 制造商零件编号 NDD03N50ZT4G
| ON Semiconductor | - | - | N | 2.6 A | - | 500 V | - | - | - | 3.3 Ω | - | 表面贴装 | 4.5V | 3 | - | -30 V、+30 V | - | 增强 | 单 | - | -55 °C | 58 W | - | - | - | +150 °C | 功率 MOSFET | 6.22mm | - | 6.73mm | 2.38mm | 10 nC @ 10 V | Si | 1 |
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- RS 库存编号 716-5558P
- 制造商零件编号 IRF2804PBF
| International Rectifier | MOSFET | N | - | - | 280 | - | 40 | TO-220 | TO-220 | - | HEXFET | 通孔 | - | 3 | - | - | - | 增强 | - | 160 | -55 | - | 330 | 20 | 1.3 | 175 | - | 4.83 | No | 10.67 | 9.02 | - | - | - |
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- RS 库存编号 893-8269P
- 制造商零件编号 VP3203N3-G
| Microchip | - | - | P | 650 mA | - | 30 V | - | - | - | 1 Ω | - | 通孔 | 3.5V | 3 | - | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 740 mW | - | - | - | +150 °C | - | 4.19mm | - | 5.21mm | 3.05mm | - | - | 1 |
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- RS 库存编号 871-4924P
- 制造商零件编号 MDF18N50BTH
| MagnaChip | - | - | N | 18 A | - | 500 V | - | - | - | 270 mΩ | - | 通孔 | 4V | 3 | - | -30 V、+30 V | - | 增强 | 单 | - | -55 °C | 37 W | - | - | - | +150 °C | - | 4.93mm | - | 10.71mm | 16.13mm | 48 nC @ 10 V | Si | 1 |
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- RS 库存编号 830-3335
- 制造商零件编号 IRLMS5703TRPBF
| International Rectifier | - | - | P | 2.4 A | - | 30 V | - | - | - | 325 mΩ | HEXFET | 表面贴装 | 1V | 6 | 1V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 1.7 W | - | - | - | +150 °C | 功率 MOSFET | 1.75mm | - | 3mm | 1.3mm | 7.2 nC @ 10 V | Si | 1 |
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- RS 库存编号 725-8357P
- 制造商零件编号 PHC2300,118
| NXP | - | - | N,P | 230 mA,340 mA | - | 300 V | - | - | - | 6 Ω,17 Ω | - | 表面贴装 | 2V | 8 | 0.8V | -20 V、+20 V | - | 增强 | 隔离式 | - | -55 °C | 1.8 W | - | - | - | +150 °C | 功率 MOSFET | 4mm | - | 5mm | 1.45mm | 2.137 nC @ 10 V,6.24 nC @ 10 V | Si | 2 |
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- RS 库存编号 728-6857
- 制造商零件编号 FK6K02010L
| Panasonic | - | - | N | 4.5 A | - | 20 V | - | - | - | 28 mΩ | - | 表面贴装 | 1.3V | 6 | - | -10 V、+10 V | - | 消耗 | - | - | - | 700 mW | - | - | - | +150 °C | 小信号 | 1.7mm | - | 2mm | 0.6mm | - | - | 1 |
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- RS 库存编号 892-2318P
- 制造商零件编号 IPP180N10N3 G
| Infineon | MOSFET | N型 | - | - | 43A | - | 100V | TO-220 | TO-220 | - | OptiMOS 3 | 通孔 | - | 3 | - | - | 33mΩ | 增强 | - | 19nC | -55°C | - | 71W | - | 1.2V | 175°C | - | - | No | 10.36mm | 15.95mm | - | - | - |
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- RS 库存编号 719-2888
- 制造商零件编号 NTD4963NT4G
| ON Semiconductor | - | - | N | 10 A | - | 30 V | - | - | - | 9.6 mΩ | - | 表面贴装 | 2.5V | 3 | - | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 1.1 W | - | - | - | +175 °C | 功率 MOSFET | 6.22mm | - | 6.73mm | 2.38mm | 8.1 nC @ 4.5 V | - | 1 |
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- RS 库存编号 725-8300P
- 制造商零件编号 2N7002F,215
| NXP | - | - | N | 475 mA | - | 60 V | - | - | - | 2 Ω | - | 表面贴装 | 2.5V | 3 | 1V | -30 V、+30 V | - | 增强 | 单 | - | -65 °C | 830 mW | - | - | - | +150 °C | 功率 MOSFET | 1.4mm | - | 3mm | 1mm | 0.69 nC @ 10 V | - | 1 |