- RS 库存编号 783-3078
- 制造商零件编号 STD15N65M5
小计(1 包,共 5 件) RMB128.59(不含税)RMB25.718/件 | STMicroelectronics | MOSFET | N | - | - | 11 | - | 710 | DPAK | DPAK | - | MDmesh M5 | 表面安装 | - | 3 | - | - | - | 增强 | - | 22 | -55 | - | 85 | 25 | 1.5 | 150 | - | 6.2 | No | 6.6 | 2.4 | - | - | - |
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- RS 库存编号 774-1168P
- 制造商零件编号 FDMS3622S
| Fairchild Semiconductor | - | - | N | 34 A | - | 25 V | - | - | - | 7 mΩ | PowerTrench | 表面贴装 | - | 8 | 0.8V | -12 V、+12 V | - | 增强 | 串行 | - | -55 °C | 2.5 W | - | - | - | +150 °C | 功率 MOSFET | 6.1mm | - | 5.1mm | 1.05mm | 26 nC @ 10 V | Si | 2 |
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- RS 库存编号 816-6919
- 制造商零件编号 PMR290UNE
| NXP | - | - | N | 700 mA | - | 20 V | - | - | - | 380 mΩ | - | 表面贴装 | 0.95V | 3 | 0.5V | +8 V | - | 增强 | - | - | -55 °C | 770 mW | - | - | - | +150 °C | 功率 MOSFET | 0.9mm | - | 1.8mm | 0.85mm | 0.45 nC @ 4.5 V | - | 1 |
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- RS 库存编号 739-6276P
- 制造商零件编号 FDMC7572S
| Fairchild Semiconductor | - | - | N | 100 A | - | 25 V | - | - | - | 4.7 mΩ | - | 表面贴装 | - | 8 | - | -20 V、+20 V | - | 增强 | - | - | -55 °C | 52 W | - | - | - | +150 °C | 功率 MOSFET | 3.4mm | - | 3.4mm | 1mm | 31 nC @ 10 V | - | 1 |
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- RS 库存编号 825-9121
- 制造商零件编号 BSC067N06LS3G
| Infineon | MOSFET | N | - | - | 50 | - | 60 | TDSON | TDSON | - | OptiMOS 3 | 表面安装 | - | 8 | - | - | - | 增强 | - | 23 | -55 | - | 69 | 20 | 0.9 | 150 | - | 6.35 | No | 5.49 | 1.1 | - | - | - |
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- RS 库存编号 827-0487P
- 制造商零件编号 DMN313DLT-7
| DiodesZetex | - | - | N | 380 mA | - | 30 V | - | - | - | 3.2 Ω | - | 表面贴装 | 1.5V | 3 | - | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 520 mW | - | - | - | +150 °C | 功率 MOSFET | 0.85mm | - | 1.7mm | 0.8mm | 0.5 nC @ 4.5 V | Si | 1 |
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- RS 库存编号 827-4717P
- 制造商零件编号 CSD16325Q5C
| Texas Instruments | - | - | N | 100 A | - | 25 V | - | - | - | 2.9 mΩ | NexFET | 表面贴装 | 1.4V | 8 | 0.9V | -8 V,+10 V | - | 增强 | - | - | -55 °C | 3.1 W | - | - | - | +150 °C | 功率 MOSFET | 5.1mm | - | 6.1mm | 1.05mm | 18 nC @ 4.5 V | - | 1 |
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- RS 库存编号 827-0496P
- 制造商零件编号 DMP2018LFK-7
| DiodesZetex | - | - | P | 6 A | - | 20 V | - | - | - | 25 mΩ | - | 表面贴装 | 1.2V | 6 | - | -12 V、+12 V | - | 增强 | 单 | - | -55 °C | 2.1 W | - | - | - | +150 °C | 功率 MOSFET | 2.35mm | - | 2.55mm | 0.58mm | 113 nC @ 10 V | Si | 1 |
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- RS 库存编号 826-9522
- 制造商零件编号 IPD30N03S4L-09
| Infineon | - | - | N | 30 A | - | 30 V | - | - | - | 13.5 mΩ | OptiMOS T2 | 表面贴装 | 2.2V | 3 | 1V | -16 V、+16 V | - | 增强 | 单 | - | -55 °C | 42 W | - | - | - | +175 °C | 功率 MOSFET | 6.22mm | - | 6.5mm | 2.3mm | 15 nC @ 10 V | Si | 1 |
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- RS 库存编号 760-9976
- 制造商零件编号 STP10NM65N
| STMicroelectronics | - | - | N | 9 A | - | 650 V | - | - | - | 480 mΩ | MDmesh | 通孔 | - | 3 | - | -25 V、+25 V | - | 增强 | - | - | - | 90 W | - | - | - | +150 °C | 功率 MOSFET | 4.6mm | - | 10.4mm | 15.75mm | 25 nC @ 10 V | - | 1 |
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- RS 库存编号 761-0455
- 制造商零件编号 STF20NM65N
| STMicroelectronics | - | - | N | 15 A | - | 650 V | - | - | - | 270 mΩ | MDmesh | 通孔 | 4V | 3 | 2V | -25 V、+25 V | - | 增强 | 单 | - | - | 30 W | - | - | - | +150 °C | - | 4.6mm | - | 10.4mm | 16.4mm | 44 nC @ 10 V | Si | 1 |
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- RS 库存编号 753-2832P
- 制造商零件编号 BSS127
| Infineon | MOSFET | N | - | - | 21 | - | 600 | SOT-23 | SOT-23 | - | SIPMOS | 表面安装 | - | 3 | - | - | - | 增强 | - | 0.65 | -55 | - | 500 | 20 | 0.82 | 150 | - | 1.3 | No | 2.9 | 1 | - | - | - |
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- RS 库存编号 753-2995P
- 制造商零件编号 IPA60R380C6
| Infineon | - | - | N | 10.6 A | - | 650 V | - | - | - | 380 mΩ | CoolMOS C6 | 通孔 | 3.5V | 3 | 2.5V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 83 W | - | - | - | +150 °C | 功率 MOSFET | 4.57mm | - | 10.36mm | 9.45mm | 32 nC @ 10 V | Si | 1 |
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- RS 库存编号 747-0910
- 制造商零件编号 NTMFS4825NFET1G
| ON Semiconductor | - | - | N | 171 A | - | 30 V | - | - | - | 3 mΩ | - | 表面贴装 | 2.5V | 8 | - | -20 V、+20 V | - | 增强 | 单 | - | -40 °C | 96.2 W | - | - | - | +150 °C | 功率 MOSFET | 6.1mm | - | 5.1mm | 1.1mm | 83.6 nC @ 10 V | Si | 1 |
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- RS 库存编号 787-7627
- 制造商零件编号 SK8403160L
| Panasonic | - | - | N | 70 A | - | 30 V | - | - | - | 3.2 mΩ | - | 表面贴装 | 3V | 8 | - | -20 V、+20 V | - | 消耗 | 单 | - | -40 °C | 28 W | - | - | - | +85 °C | - | 3.05mm | - | 3.05mm | 0.95mm | 22 nC @ 4.5 V | - | 1 |
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- RS 库存编号 823-5617
- 制造商零件编号 IPP600N25N3 G
| Infineon | - | - | N | 25 A | - | 250 V | - | - | - | 60 mΩ | OptiMOS 3 | 通孔 | 4V | 3 | 2V | -20 V、+20 V | - | 增强 | 单 | - | -55 °C | 136 W | - | - | - | +175 °C | 功率 MOSFET | 4.57mm | - | 10.36mm | 15.95mm | 22 nC @ 10 V | Si | 1 |
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- RS 库存编号 688-6976P
- 制造商零件编号 IRFP2907ZPBF
| International Rectifier | MOSFET | N | - | - | 170 | - | 80 | TO-247 | TO-247 | - | HEXFET | 通孔 | - | 3 | - | - | - | 增强 | - | 180 | -55 | - | 310 | 20 | 1.3 | 175 | - | 5.3 | No | 15.9 | 20.3 | - | - | - |
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- RS 库存编号 827-6113
- 制造商零件编号 TK12E60W,S1VX(S
| Toshiba | - | - | N | 11.5 A | - | 600 V | - | - | - | 300 mΩ | TK | 通孔 | 3.7V | 3 | - | -30 V、+30 V | - | 增强 | 单 | - | - | 110 W | - | - | - | +150 °C | 功率 MOSFET | 4.45mm | - | 10.16mm | 15.1mm | 25 nC @ 10 V | Si | 1 |
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- RS 库存编号 826-9074P
- 制造商零件编号 SPD09P06PLG
| Infineon | MOSFET | P | - | - | 9.7 | - | 60 | DPAK | DPAK | - | SIPMOS | 表面安装 | - | 3 | - | - | - | 增强 | - | 14 | -55 | - | 42 | 20 | -1.1 | 175 | - | 6.22 | No | 6.73 | 2.41 | - | - | - |
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- RS 库存编号 688-9137
- 制造商零件编号 NTMD3P03R2G
| ON Semiconductor | - | - | P | 3.8 A | - | 30 V | - | - | - | 85 mΩ | - | 表面贴装 | 2.5V | 8 | - | -20 V、+20 V | - | 增强 | 隔离式 | - | -55 °C | 2000 mW | - | - | - | +150 °C | 功率 MOSFET | 4mm | - | 5mm | 1.5mm | 16 nC @ 10 V | Si | 2 |